IC number | Manufacturer | Documentation |
---|---|---|
6540 | MOS Technology | Preliminary Datasheet July 1977 |
IC number | Package | Access time |
---|---|---|
6540 | 28-pin DIP | 300 ns |
IC number | CBM part number | CBM part description | Chip description |
---|
Device | Position |
---|
Pin | Type | Name |
---|---|---|
1 | Power | VSS |
2..4 | Input | CS5..CS3 |
5..10 | Input | A0..A5 |
11 | Input | A9 |
12 | Power | VCC |
13..15 | Input | A8..A6 |
16 | Input | Ø2 |
17 | Input | CS1 |
18 | Input | A10 |
19..26 | I/O | DB7..DB0 |
27 | Input | CS2 |
28 | N/C | NC |
Three-state outputs provide bus-compatibility with microprocessor-based memory systems. The ROM's are organized as 2048 words of 8 bits each.
Mask options provide user specification of chip select equations, allowing addressing anywhere within a 65K memory space without external decode circuitry.
Rating | Symbol | Voltage | Unit |
---|---|---|---|
Supply Voltage | VCC | -0.3 to +7.0 | V |
Input/Output Voltage | VIN | -0.3 to +7.0 | V |
Operating Temperature | TOP | 0 to 70 | °C |
Storage Temperature | TSTG | -55 to +150 | °C |
Characteristic | Symbol | Min. | Typ. | Max. | Unit |
---|---|---|---|---|---|
Input High Voltage | VIH | VSS+2.0 | - | VCC | V |
Input Low Voltage | VIH | VSS-.3 | - | VSS+.8 | V |
Input Leakage Current (A0-A10, CS1, CS2, Ø2) | IIN | 1.0 | 2.5 | µA | |
Input Current for High Impedance (Three State) Outputs: VIN = 0.4V to 2.4V | ITSI | 1.0 | 10 | µA | |
Output High Voltage: VCC = Min ILOAD <= -100µA | VOH | VSS+2.4 | V | ||
Output Low Voltage: VCC = Min ILOAD <= 1.6mA | VOL | VSS+.4 | V | ||
Output Low Current (sinking) VOL <= .4V | IOL | 1.6 | mA | ||
Supply Current | ICC | 110 | 150 | mA |
Copyright © 2005-2010 Ronald van Dijk - All rights reserved
Sources:
MOS Technology 6540/6541 Preliminary Datasheet July 1977
Last update: 13 May 2010